TPAR3D S1G
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TPAR3D S1G |
| Manufacturer | TSC (Taiwan Semiconductor) |
| Description | DIODE AVALANCHE 200V 3A TO277A |
| Category | Discrete Semiconductor Products |
| Subcategory | Diodes - Rectifiers - Single |
| Speed | Fast Recovery = 200mA (Io) |
| Diode Type | Avalanche |
| Packaging | Cut Tape (CT) |
| Other Names | TPAR3D S1GCT TPAR3D S1GCT-ND TPAR3DS1GCT |
| Package Case | TO-277, 3-PowerDFN |
| Mounting Type | Surface Mount |
| Capacitance Vr F | 58pF @ 4V, 1MHz |
| Detailed Description | Diode Avalanche 200V 3A Surface Mount TO-277A (SMPC) |
| Supplier Device Package | TO-277A (SMPC) |
| Voltage D C Reverse Vr Max | 200V |
| Voltage Forward Vf Max If | 1.55V @ 3A |
| Reverse Recovery Timetrr | 120ns |
| Current Reverse Leakage Vr | 10µA @ 200V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Average Rectified Io | 3A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Operating Temperature Junction | -55°C ~ 175°C |