JAN1N6622
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | JAN1N6622 |
| Manufacturer | Microsemi |
| Description | DIODE GEN PURP 660V 2A AXIAL |
| Category | Discrete Semiconductor Products |
| Subcategory | Diodes - Rectifiers - Single |
| Speed | Fast Recovery = 200mA (Io) |
| Series | Military, MIL-PRF-19500/585 |
| Diode Type | Standard |
| Packaging | Bulk |
| Other Names | 1086-2301 1086-2301-MIL |
| Package Case | A, Axial |
| Mounting Type | Through Hole |
| Capacitance Vr F | 10pF @ 10V, 1MHz |
| Detailed Description | Diode Standard 660V 2A Through Hole |
| Voltage D C Reverse Vr Max | 660V |
| Voltage Forward Vf Max If | 1.6V @ 2A |
| Reverse Recovery Timetrr | 30ns |
| Current Reverse Leakage Vr | 500nA @ 660V |
| Lead Free Status Ro H S Status | Contains lead / RoHS non-compliant |
| Current Average Rectified Io | 2A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Operating Temperature Junction | -65°C ~ 150°C |