JAN1N649-1
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | JAN1N649-1 |
| Manufacturer | Microsemi Corporation |
| Description | DIODE GEN PURP 600V 400MA DO35 |
| Category | Discrete Semiconductor Products |
| Subcategory | Diodes - Rectifiers - Single |
| Series | Military, MIL-PRF-19500/240 |
| Other Names | 1086-15995 1086-15995-MIL |
| Ro H S Status | Bulk |
| Mounting Type | Through Hole |
| Polarization | DO-204AH, DO-35, Axial |
| Capacitance Vr F | -65°C ~ 175°C |
| Voltage Breakdown | DO-35 |
| Diode Configuration | 50nA @ 600V |
| Expanded Description | Diode Standard 600V 400mA Through Hole DO-35 |
| Voltage Forward Vf Max If | 400mA |
| Voltage Peak Reverse Max | Standard |
| Manufacturer Part Number | JAN1N649-1 |
| Reverse Recovery Timetrr | Standard Recovery >500ns, > 200mA (Io) |
| Current Reverse Leakage Vr | 1V @ 400mA |
| Lead Free Status Ro H S Status | Contains lead / RoHS non-compliant |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Current Average Rectified Ioper Diode | 600V |