JAN1N5550US
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Invent, Innovate, Integrate
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| Part Number | JAN1N5550US |
| Manufacturer | Microsemi Corporation |
| Description | DIODE GEN PURP 200V 3A B-MELF |
| Category | Discrete Semiconductor Products |
| Subcategory | Diodes - Rectifiers - Single |
| Series | Military, MIL-PRF-19500/420 |
| Other Names | 1086-19411 1086-19411-MIL |
| Ro H S Status | Bulk |
| Mounting Type | Surface Mount |
| Polarization | SQ-MELF, B |
| Capacitance Vr F | -65°C ~ 175°C |
| Voltage Breakdown | D-5B |
| Diode Configuration | 1µA @ 200V |
| Expanded Description | Diode Standard 200V 3A Surface Mount D-5B |
| Voltage Forward Vf Max If | 3A |
| Voltage Peak Reverse Max | Standard |
| Manufacturer Part Number | JAN1N5550US |
| Reverse Recovery Timetrr | Fast Recovery = 200mA (Io) |
| Current Reverse Leakage Vr | 1.2V @ 9A |
| Lead Free Status Ro H S Status | Contains lead / RoHS non-compliant |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Operating Temperature Junction | 2µs |
| Current Average Rectified Ioper Diode | 200V |