1N8035-GA
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | 1N8035-GA |
| Manufacturer | GeneSiC Semiconductor |
| Description | DIODE SCHOTTKY 650V 14.6A TO276 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Diodes - Rectifiers - Single |
| Speed | No Recovery Time > 500mA (Io) |
| Diode Type | Silicon Carbide Schottky |
| Packaging | Tube |
| Other Names | 1242-1122 1N8035GA |
| Package Case | TO-276AA |
| Mounting Type | Surface Mount |
| Base Part Number | 1N8035 |
| Capacitance Vr F | 1107pF @ 1V, 1MHz |
| Detailed Description | Diode Silicon Carbide Schottky 650V 14.6A (DC) Surface Mount TO-276 |
| Supplier Device Package | TO-276 |
| Voltage D C Reverse Vr Max | 650V |
| Voltage Forward Vf Max If | 1.5V @ 15A |
| Reverse Recovery Timetrr | 0ns |
| Current Reverse Leakage Vr | 5µA @ 650V |
| Lead Free Status Ro H S Status | Contains lead / RoHS non-compliant |
| Current Average Rectified Io | 14.6A (DC) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Operating Temperature Junction | -55°C ~ 250°C |