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1N8026-GA

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number 1N8026-GA
Manufacturer GeneSiC Semiconductor
Description DIODE SILICON 1.2KV 8A TO257
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Diodes - Rectifiers - Single
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Packaging Tube
Other Names 1242-1113 1N8026GA
Package Case TO-257-3
Mounting Type Through Hole
Base Part Number 1N8026
Capacitance Vr F 237pF @ 1V, 1MHz
Detailed Description 388548
Supplier Device Package TO-257
Voltage D C Reverse Vr Max 1200V
Voltage Forward Vf Max If 1.6V @ 2.5A
Reverse Recovery Timetrr 0ns
Current Reverse Leakage Vr 10µA @ 1200V
Lead Free Status Ro H S Status Contains lead / RoHS non-compliant
Current Average Rectified Io 8A (DC)
Moisture Sensitivity Level M S L 1 (Unlimited)
Operating Temperature Junction -55°C ~ 250°C

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