1N6625E3
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | 1N6625E3 |
| Manufacturer | Microsemi Corporation |
| Description | DIODE GEN PURP 1.1KV 1A AXIAL |
| Category | Discrete Semiconductor Products |
| Subcategory | Diodes - Rectifiers - Single |
| Ro H S Status | Bulk |
| Mounting Type | Through Hole |
| Polarization | A, Axial |
| Capacitance Vr F | -65°C ~ 150°C |
| Voltage Breakdown | A, Axial |
| Diode Configuration | 1µA @ 1000V |
| Expanded Description | Diode Standard 1100V (1.1kV) 1A Through Hole A, Axial |
| Voltage Forward Vf Max If | 1A |
| Voltage Peak Reverse Max | Standard |
| Manufacturer Part Number | 1N6625E3 |
| Reverse Recovery Timetrr | Fast Recovery = 200mA (Io) |
| Current Reverse Leakage Vr | 1.95V @ 1.5A |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Operating Temperature Junction | 80ns |
| Current Average Rectified Ioper Diode | 1100V (1.1kV) |