MURT10060R
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | MURT10060R |
| Manufacturer | GeneSiC Semiconductor |
| Description | DIODE ARRAY GP REV POLAR 3TOWER |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Diodes - Rectifiers - Arrays |
| Speed | Fast Recovery = 200mA (Io) |
| Diode Type | Standard, Reverse Polarity |
| Packaging | Bulk |
| Other Names | MURT10060RGN |
| Package Case | Three Tower |
| Mounting Type | Chassis Mount |
| Detailed Description | Diode Array Standard, Reverse Polarity 600V 100A (DC) Chassis Mount Three Tower |
| Supplier Device Package | Three Tower |
| Voltage D C Reverse Vr Max | 600V |
| Voltage Forward Vf Max If | 1.7V @ 100A |
| Reverse Recovery Timetrr | 75ns |
| Current Reverse Leakage Vr | 25µA @ 50V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Operating Temperature Junction | -40°C ~ 175°C |
| Current Average Rectified Ioper Diode | 100A (DC) |