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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Output Type | Sensing Method | Sensing Distance | Response Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SFH 320-3/4-Z | OSRAM Opto Semiconductors, Inc. | PHOTOTRANS NPN TOPLED 2-PLCC | Advanced Power TOPLED® | -40°C ~ 100°C (TA) | Tape & Reel (TR) | Surface Mount | - | - | - | - | - | |
| SD5491-003 | Honeywell Sensing and Productivity Solutions | PHOTOTRANSISTOR NPN TO-18 | - | -55°C ~ 125°C (TA) | Bulk | Through Hole | - | - | - | - | - | |
| RPT-38PT3F | LAPIS Semiconductor | PHOTOTRANSISTOR TOPVIEW DIP | - | -25°C ~ 85°C (TA) | Bulk | Through Hole | - | - | - | - | - | |
| SFH 313FA | OSRAM Opto Semiconductors, Inc. | PHOTOTRANSISTOR NPN 870NM W/FLTR | - | -40°C ~ 100°C (TA) | Bulk | Through Hole | - | - | - | - | - | |
| OP521DA | Optek Technology / TT Electronics | PHOTODARLINGTON NPN CLR 1206 SMD | - | -25°C ~ 85°C (TA) | Original-Reel® | Surface Mount | - | - | - | - | - | |
| SFH 3505FA | OSRAM Opto Semiconductors, Inc. | PHOTOTRANS NPN 860NM SMD RADIAL | - | -40°C ~ 85°C (TA) | Cut Tape (CT) | Surface Mount | - | - | - | - | - | |
| SD5443-003 | Honeywell Sensing and Productivity Solutions | SENSOR PHOTOTRANSISTOR NPN TO-46 | - | -55°C ~ 125°C (TA) | Bulk | Through Hole | - | - | - | - | - | |
| OP506B | Optek Technology / TT Electronics | PHOTOTRANSISTOR 3MM 935NM NPN | - | -40°C ~ 100°C (TA) | Bulk | Through Hole | - | - | - | - | - | |
| OP508FA | Optek Technology / TT Electronics | PHOTOTRANS SILICON NPN FLAT LENS | - | -40°C ~ 100°C (TA) | Bulk | Through Hole | - | - | - | - | - | |
| TEKT5400S-ASZ | Electro-Films (EFI) / Vishay | PHOTOTRANSISTOR NPN SIDE VIEW | - | -40°C ~ 85°C (TA) | Tape & Box (TB) | Through Hole | - | - | - | - | - |
Phototransistors are semiconductor devices that convert light energy into electrical signals. They consist of a semiconductor junction and a transparent window that allows light to enter and interact with the semiconductor material. Phototransistors amplify the current generated by incident light, making them suitable for applications requiring high sensitivity to light levels, such as optical encoders, ambient light sensing, and infrared remote control systems.