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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Output Type | Sensing Method | Sensing Distance | Response Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VEMT3700F-GS08 | Electro-Films (EFI) / Vishay | PHOTO TRANS. SMD PLCC2 | Automotive, AEC-Q100 | -40°C ~ 100°C (TA) | Tape & Reel (TR) | Surface Mount | - | - | - | - | - | |
| OP800A | Optek Technology / TT Electronics | PHOTOTRANS SILICON NPN HERM TO18 | - | -65°C ~ 125°C (TA) | Bulk | Through Hole | - | - | - | - | - | |
| SD3443-003 | Honeywell Sensing and Productivity Solutions | SENSOR PHOTOTRANSISTOR NPN TO-46 | - | -55°C ~ 125°C (TA) | Bulk | Through Hole | - | - | - | - | - | |
| VEMT2023SLX01 | Electro-Films (EFI) / Vishay | NPN PHOTO TRANSISTOR SMD SIDE LO | Automotive, AEC-Q101 | -40°C ~ 100°C (TA) | Original-Reel® | Surface Mount, Right Angle | - | - | - | - | - | |
| OP580DA | Optek Technology / TT Electronics | PHOTODARLINGTON NPN CLR PLCC-2 | - | -25°C ~ 85°C (TA) | Cut Tape (CT) | Surface Mount | - | - | - | - | - | |
| QSD124A4R0 | AMI Semiconductor / ON Semiconductor | PHOTOTRANSISTOR IR 880NM 5MM | - | -40°C ~ 100°C (TA) | Tape & Reel (TR) | Through Hole | - | - | - | - | - | |
| SFH 3710-Z | OSRAM Opto Semiconductors, Inc. | PHOTOTRANSISTOR ALS SMD CHIPLED | - | -40°C ~ 85°C (TA) | Cut Tape (CT) | Surface Mount | - | - | - | - | - | |
| QSC5T50B | QT Brightek | LED 3MM PHOTOTRANS 940NM BK LENS | - | -40°C ~ 85°C (TA) | Bulk | Through Hole | - | - | - | - | - | |
| EAPST3224A0 | Everlight Electronics | SMD IR DETECTOR - 1.8MM ROUND SU | - | -25°C ~ 85°C (TA) | - | Surface Mount | - | - | - | - | - | |
| BPX 89 | OSRAM Opto Semiconductors, Inc. | PHOTOTRANSISTOR ARRAY NPN MINI | - | -40°C ~ 80°C (TA) | Bulk | Through Hole | - | - | - | - | - |
Phototransistors are semiconductor devices that convert light energy into electrical signals. They consist of a semiconductor junction and a transparent window that allows light to enter and interact with the semiconductor material. Phototransistors amplify the current generated by incident light, making them suitable for applications requiring high sensitivity to light levels, such as optical encoders, ambient light sensing, and infrared remote control systems.