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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI8274BB1-IS1R | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.7 V ~ 30 V | - | - | |
| PS9531L3-V-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV 1CH GATE DRIVER 8SMD | - | -40°C ~ 125°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| ACPL-P343-000E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DRVR 6SO | - | -40°C ~ 105°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI82391BB-IS1 | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 10 V ~ 24 V | - | - | |
| PS9552L3-E3-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV GATE DRIVER 8SMD GW | NEPOC | -40°C ~ 100°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI8233AB-D-ISR | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| SI8274GB4D-IS1 | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 4.2 V ~ 30 V | - | - | |
| PS9308L-V-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV 1CH GATE DRVR 6SDIP | - | -40°C ~ 110°C | Strip | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI8238AB-D-IS1 | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| UCC5390ECDR | N/A | DGTL ISO 3KV 1CH GATE DRVR 8SOIC | - | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 13.2 V ~ 33 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.