Loading products…
| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HCPL-5120-200 | Avago Technologies (Broadcom Limited) | OPTOISO 1.5KV 1CH GATE DRVR 8DIP | - | -55°C ~ 125°C | Tube | Through Hole | - | - | 15 V ~ 30 V | - | - | |
| HCPL-3020-000E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DVR 8DIP | - | -40°C ~ 100°C | Tube | Through Hole | - | - | 10 V ~ 30 V | - | - | |
| SI8231BB-B-IS1 | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 9.4 V ~ 24 V | - | - | |
| TLP352(LF1,F) | Toshiba Semiconductor and Storage | OPTOISO 3.75KV 1CH GATE DVR 8SMD | - | -40°C ~ 125°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| ACPL-332J-500E | Avago Technologies (Broadcom Limited) | OPTOISO 5KV 1CH GATE DRIVER 16SO | - | -40°C ~ 105°C | Cut Tape (CT) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| ACPL-330J-000E | Avago Technologies (Broadcom Limited) | OPTOISO 5KV 1CH GATE DRIVER 16SO | - | -40°C ~ 105°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI82396CD-ISR | Energy Micro (Silicon Labs) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 12.8 V ~ 24 V | - | - | |
| PS9531L2-V-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV 1CH GATE DRIVER 8SMD | - | -40°C ~ 125°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI8274BB1-IS1R | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.7 V ~ 30 V | - | - | |
| PS9531L3-V-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV 1CH GATE DRIVER 8SMD | - | -40°C ~ 125°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.