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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI8233AB-D-IMR | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRIVER 14LGA | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| HCPL-0302-000E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DRVR 8SO | - | -40°C ~ 100°C | Tube | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| SI82398BD-IS | Energy Micro (Silicon Labs) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 10 V ~ 24 V | - | - | |
| TLP5774(TP,E | Toshiba Semiconductor and Storage | OPTOISO 5KV 1CH GATE DRIVER 6SO | - | -40°C ~ 110°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| HCPL-3020-360E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV GATE DVR 8DIP GW | - | -40°C ~ 100°C | Tube | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| SI8232AB-D-IS | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| FOD3180TV | AMI Semiconductor / ON Semiconductor | OPTOISO 5KV 1CH GATE DRIVER 8DIP | - | -40°C ~ 100°C | Tube | Through Hole | - | - | 10 V ~ 20 V | - | - | |
| SI8274AB1-IM | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRIVER 14LGA | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 4.6 V ~ 30 V | - | - | |
| SI8261AAC-C-IPR | Energy Micro (Silicon Labs) | DGTL ISO 3.75KV GATE DRVR 8DIPGW | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 30 V | - | - | |
| TLP700A(F) | Toshiba Semiconductor and Storage | X36 PB-F PHOTOCOUPLER THRU HOLE | - | -40°C ~ 110°C | - | - | - | - | 15 V ~ 30 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.