Isolators - Gate Drivers

Isolators - Gate Drivers

  1. Home
  2. Categories
  3. Isolators
  4. Isolators - Gate Drivers
Manufacturer
Series
Operating Temperature
Packaging
Mounting Type
RoHS Status
Manufacturer Part Number
Approvals
Voltage - Supply
Shell Style

Clear


Image Part Number Manufacturer Description Series Operating Temperature Packaging Mounting Type RoHS Status Manufacturer Part Number Approvals Voltage - Supply Shell Style
TLP700A(TP,F) Toshiba Semiconductor and Storage X36 PB-F PHOTOCOUPLER THRU HOLE - -40°C ~ 110°C - - - - cUR, UR, VDE 15 V ~ 30 V -
SI8287CD-ISR Energy Micro (Silicon Labs) IC AMP DVR 4.0A DESAT DET 20SOIC - - Tape & Reel (TR) - - - - - -
PS9308L2-V-E3-AX Renesas Electronics America OPTOISO 5KV 1CH GATE DRVR 6SDIP - -40°C ~ 110°C Tape & Reel (TR) Surface Mount - - CSA, SEMKO, UL, VDE 15 V ~ 30 V -
PS9308L-V-AX Renesas Electronics America OPTOISO 5KV 1CH GATE DRVR 6SDIP - -40°C ~ 110°C Strip Surface Mount - - CSA, SEMKO, UL, VDE 15 V ~ 30 V -
PS9331L-E3-AX Renesas Electronics America OPTOISO 5KV GATE DRIVER 6SDIP GW - -40°C ~ 125°C Tape & Reel (TR) Surface Mount - - CSA, SEMKO, UL 15 V ~ 30 V -
HCPL-3020-300E Avago Technologies (Broadcom Limited) OPTOISO 3.75KV GATE DVR 8DIP GW - -40°C ~ 100°C Tube Surface Mount - - CSA, UR 10 V ~ 30 V -
ACPL-K30T-500E Avago Technologies (Broadcom Limited) OPTOISO 5KV 1CH GATE DRIVER 8SO Automotive, AEC-Q100, R²Coupler™ -40°C ~ 125°C Tape & Reel (TR) Surface Mount - - CSA, UR - -
SI8220DB-A-IS Energy Micro (Silicon Labs) DGTL ISO 2.5KV GATE DRIVER 8SOIC Automotive, AEC-Q100 -40°C ~ 125°C Tube Surface Mount - - CSA, UR, VDE 14.8 V ~ 24 V -
SI8237AB-B-IS1 Energy Micro (Silicon Labs) DGTL ISO 2.5KV GATE DRVR 16SOIC Automotive, AEC-Q100 -40°C ~ 125°C Tube Surface Mount - - CQC, CSA, UR, VDE 6.5 V ~ 24 V -
PS9308L2-V-E3-AX CEL (California Eastern Laboratories) OPTOISO 5KV 1CH GATE DRVR 6SDIP - -40°C ~ 110°C Tape & Reel (TR) Surface Mount - - CSA, SEMKO, UL, VDE 15 V ~ 30 V -

About Isolators - Gate Drivers


Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.