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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI8230BD-D-IS3 | Energy Micro (Silicon Labs) | ISOLATED GATE DRIVER, 8 MM CREEP | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| SI8275ABD-IM | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRIVER 14LGA | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 4.6 V ~ 30 V | - | - | |
| IX3120G | IXYS Integrated Circuits Division | OPTOISO 3.75KV 1CH GATE DVR 8DIP | - | -40°C ~ 100°C | Tube | Through Hole | - | - | 15 V ~ 30 V | - | - | |
| ACPL-K342-000E | Avago Technologies (Broadcom Limited) | OPTOISO 5KV 1CH GATE DRIVER 8SO | - | -40°C ~ 105°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| PS9402-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV 1CH GATE DRVR 16SSOP | - | -40°C ~ 110°C | Bulk | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI8283CC-ISR | Energy Micro (Silicon Labs) | DGTL ISO 3.75KV 1CH GATE DRVR | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 2.8 V ~ 5.5 V | - | - | |
| SI8283CD-IS | Energy Micro (Silicon Labs) | DGTL ISO 5KV 1CH GATE DVR 24SOIC | - | -40°C ~ 125°C | Tube | Surface Mount | - | - | 12 V ~ 30 V | - | - | |
| TLP5772(D4,E | Toshiba Semiconductor and Storage | GATE DRIVE COUPLER; LOW INPUT CU | - | -40°C ~ 110°C | - | - | - | - | 10 V ~ 30 V | - | - | |
| FOD3182SD | AMI Semiconductor / ON Semiconductor | OPTOISO 5KV 1CH GATE DRIVER 8SMD | - | -40°C ~ 100°C | Original-Reel® | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| HCPL-T250-360E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV GATE DRVR 8DIP GW | - | -20°C ~ 85°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.