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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PS9531L2-V-AX | Renesas Electronics America | OPTOISO 5KV 1CH GATE DRIVER 8SMD | - | -40°C ~ 125°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI8232BD-D-ISR | Energy Micro (Silicon Labs) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 9.4 V ~ 24 V | - | - | |
| TLP250(TP1,F) | Toshiba Semiconductor and Storage | OPTOISO 2.5KV 1CH GATE DRVR 8SMD | - | -20°C ~ 85°C | Cut Tape (CT) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| FOD3184TSD | AMI Semiconductor / ON Semiconductor | OPTOISO 5KV 1CH GATE DRIVER 8SMD | - | -40°C ~ 100°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| HCPL-3150-000E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DVR 8DIP | - | -40°C ~ 100°C | Tube | Through Hole | - | - | 15 V ~ 30 V | - | - | |
| SI8220CB-D-IS | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRIVER 8SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 12.2 V ~ 24 V | - | - | |
| PS9308L-E3-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV 1CH GATE DRVR 6SDIP | - | -40°C ~ 110°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| HCPL-3140-060E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DVR 8DIP | - | -40°C ~ 100°C | Tube | Through Hole | - | - | 10 V ~ 30 V | - | - | |
| ADUM4120BRIZ | ADI (Analog Devices, Inc.) | DGTL ISO 5KV 1CH GATE DRVR 6SOIC | iCoupler® | -40°C ~ 125°C | Tube | Surface Mount | - | - | 7.5 V ~ 35 V | - | - | |
| SI8220CB-A-ISR | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRIVER 8SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 12.2 V ~ 24 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.