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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI8230AB-B-IS1R | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| HCPL-3020 | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DVR 8DIP | - | -40°C ~ 100°C | Tube | Through Hole | - | - | 10 V ~ 30 V | - | - | |
| TLP350H(F) | Toshiba Semiconductor and Storage | X36 PB-F PHOTOCOUPLER THRU HOLE | - | -40°C ~ 125°C | - | - | - | - | 15 V ~ 30 V | - | - | |
| 1EDI10I12MHXUMA1 | International Rectifier (Infineon Technologies) | IC IGBT DVR 1200V 8DSO | EiceDriver™ | -40°C ~ 150°C (TJ) | Tape & Reel (TR) | Surface Mount | - | - | 13 V ~ 18 V | - | - | |
| ACPL-P347-500E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DRVR 6SO | - | -40°C ~ 105°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI8273GB-IS1R | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 4.2 V ~ 30 V | - | - | |
| HCPL-315J#500 | Avago Technologies (Broadcom Limited) | OPTOISO 5KV 2CH GATE DRIVER 16SO | - | -40°C ~ 100°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI8231AB-D-IS1R | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| ISO5852SDW | N/A | DGTL ISO 5.7KV GATE DRVR 16SOIC | - | -40°C ~ 125°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| 1EDI20I12AFXUMA1 | International Rectifier (Infineon Technologies) | IC IGBT DVR 1200V 2A 8DSO | EiceDriver™ | -40°C ~ 150°C (TJ) | Cut Tape (CT) | Surface Mount | - | - | 13 V ~ 35 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.