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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI8286CC-IS | Energy Micro (Silicon Labs) | DGTL ISO 3.75KV 1CH GATE DRVR | Automotive, AEC-Q100 | -40°C ~ 125°C | - | Surface Mount | - | - | 2.8 V ~ 5.5 V | - | - | |
| SI8220BD-A-ISR | Energy Micro (Silicon Labs) | DGTL ISO 5KV 1CH GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 9.4 V ~ 24 V | - | - | |
| SI8234BB-D-IMR | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRIVER 14LGA | Automotive, AEC-Q100 | -40°C ~ 125°C | Cut Tape (CT) | Surface Mount | - | - | 9.4 V ~ 24 V | - | - | |
| ADUM4224WCRWZ | ADI (Analog Devices, Inc.) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive | -40°C ~ 125°C | Tube | Surface Mount | - | - | 3 V ~ 5.5 V, 4.5 V ~ 18 V | - | - | |
| ACPL-W302-560E | Avago Technologies (Broadcom Limited) | OPTOISO 5KV 1CH GATE DRIVER 6SO | - | -40°C ~ 100°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| UCC5320ECDR | N/A | DGTL ISO 3KV 1CH GATE DRVR 8SOIC | - | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 13.2 V ~ 33 V | - | - | |
| SI8281BC-IS | Energy Micro (Silicon Labs) | DGTL ISO 3.75KV 1CH GATE DRVR | Automotive, AEC-Q100 | -40°C ~ 125°C | - | Surface Mount | - | - | 2.8 V ~ 5.5 V | - | - | |
| SID1182K | Power Integrations | DGTL ISO 5KV GATE DRVR ESOP-R16B | SCALE-iDriver™ | -40°C ~ 125°C | Tube | Surface Mount | - | - | 4.75 V ~ 5.25 V | - | - | |
| FOD3184S | AMI Semiconductor / ON Semiconductor | OPTOISO 5KV 1CH GATE DRIVER 8SMD | - | -40°C ~ 100°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| FOD3184SD | AMI Semiconductor / ON Semiconductor | OPTOISO 5KV 1CH GATE DRIVER 8SMD | - | -40°C ~ 100°C | Original-Reel® | Surface Mount | - | - | 15 V ~ 30 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.