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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TLP351(TP1,F) | Toshiba Semiconductor and Storage | OPTOISO 3.75KV 1CH GATE DVR 8SMD | - | -40°C ~ 100°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| ACPL-K34T-500E | Avago Technologies (Broadcom Limited) | OPTOISO 5KV 1CH GATE DRIVER 8SO | Automotive, AEC-Q100, R²Coupler™ | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 20 V | - | - | |
| SI8274GB1-IM1 | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRIVER 14LGA | Automotive, AEC-Q100 | -40°C ~ 125°C | - | Surface Mount | - | - | 4.2 V ~ 30 V | - | - | |
| SI8281CC-IS | Energy Micro (Silicon Labs) | DGTL ISO 3.75KV 1CH GATE DRVR | Automotive, AEC-Q100 | -40°C ~ 125°C | - | Surface Mount | - | - | 2.8 V ~ 5.5 V | - | - | |
| PS9308L2-AX | Renesas Electronics America | OPTOISO 5KV 1CH GATE DRVR 6SDIP | - | -40°C ~ 110°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI8261BCC-C-IS | Energy Micro (Silicon Labs) | DGTL ISO 3.75KV GATE DRVR 8SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 13.5 V ~ 30 V | - | - | |
| SI8230BB-B-IS | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 9.4 V ~ 24 V | - | - | |
| ACNU-3430-500E | Avago Technologies (Broadcom Limited) | OPTOISO 5KV 1CH GATE DRIVER 8SSO | - | - | Cut Tape (CT) | Surface Mount | - | - | - | - | - | |
| PS9332L2-V-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV GATE DRIVER 8SDIP GW | - | -40°C ~ 125°C | Bulk | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| PS9505-V-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV 1CH GATE DRIVER 8DIP | - | -40°C ~ 110°C | Bulk | Through Hole | - | - | 15 V ~ 30 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.