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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TLP151A(TPR,E) | Toshiba Semiconductor and Storage | OPTOISO 3.75KV GATE DRIVER 6SO-5 | - | -40°C ~ 110°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| ACPL-K30T-060E | Avago Technologies (Broadcom Limited) | OPTOISO 5KV 1CH GATE DRIVER 8SO | Automotive, AEC-Q100, R²Coupler™ | -40°C ~ 125°C | Tube | Surface Mount | - | - | - | - | - | |
| FOD3180 | AMI Semiconductor / ON Semiconductor | OPTOISO 5KV 1CH GATE DRIVER 8DIP | - | -40°C ~ 100°C | Tube | Through Hole | - | - | 10 V ~ 20 V | - | - | |
| FOD8342 | AMI Semiconductor / ON Semiconductor | OPTOISO 5KV 1CH GATE DRIVER 6SOP | - | -40°C ~ 100°C | Tube | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| HCNW3120-500E | Avago Technologies (Broadcom Limited) | OPTOISO 5KV GATE DRIVER 8DIP GW | - | -40°C ~ 100°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| ACPL-P314-560E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DRVR 6SO | - | -40°C ~ 100°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| SI8238AD-D-IS3R | Energy Micro (Silicon Labs) | DUAL ISOLATED GATE DRIVER, 8 MM | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| UCC21521ADW | N/A | DGTL ISO 5.7KV GATE DRVR 16SOIC | - | -40°C ~ 125°C | Tube | Surface Mount | - | - | 6.5 V ~ 25 V | - | - | |
| ACNT-H313-500E | Avago Technologies (Broadcom Limited) | OPTOISO 7.5KV 1CH GATE DRVR 8SO | - | -40°C ~ 105°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| CPC3140G | IXYS Integrated Circuits Division | OPTOISO 3.75KV 1CH GATE DVR 8DIP | - | -40°C ~ 100°C | Tube | Through Hole | - | - | 10 V ~ 30 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.