Loading products…
| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ADUM3221BRZ | ADI (Analog Devices, Inc.) | DGTL ISO 2.5KV GATE DRIVER 8SOIC | iCoupler® | -40°C ~ 125°C | Tube | Surface Mount | - | - | 7.6 V ~ 18 V | - | - | |
| ACPL-P345-500E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DRVR 6SO | - | -40°C ~ 105°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 20 V | - | - | |
| SI82391AD-IS | Energy Micro (Silicon Labs) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| SI8234BB-C-IS1 | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 9.4 V ~ 24 V | - | - | |
| SI8230BB-B-ISR | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 9.4 V ~ 24 V | - | - | |
| SI8282CC-IS | Energy Micro (Silicon Labs) | DGTL ISO 3.75KV 1CH GATE DRVR | Automotive, AEC-Q100 | -40°C ~ 125°C | - | Surface Mount | - | - | 2.8 V ~ 5.5 V | - | - | |
| FOD3182 | AMI Semiconductor / ON Semiconductor | OPTOISO 5KV 1CH GATE DRIVER 8DIP | - | -40°C ~ 100°C | Tube | Through Hole | - | - | 10 V ~ 30 V | - | - | |
| HCPL-T250#360 | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV GATE DRVR 8DIP GW | - | -20°C ~ 85°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| ADUM7234BRZ | ADI (Analog Devices, Inc.) | DGTL ISO 1KV 2CH GATE DVR 16SOIC | iCoupler® | -40°C ~ 105°C | Tube | Surface Mount | - | - | 12 V ~ 18 V | - | - | |
| SI8230AD-D-ISR | Energy Micro (Silicon Labs) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 24 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.