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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI8237BD-D-ISR | Energy Micro (Silicon Labs) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 9.4 V ~ 24 V | - | - | |
| ADUM7223ACCZ | ADI (Analog Devices, Inc.) | DGTL ISO 2.5KV GATE DRIVER 13LGA | iCoupler® | -40°C ~ 125°C | Tray | Surface Mount | - | - | 4.5 V ~ 18 V | - | - | |
| UCC5390ECD | N/A | UCC5390ECD | - | -40°C ~ 125°C | Tube | Surface Mount | - | - | 13.2 V ~ 33 V | - | - | |
| ADUM4224WARWZ-RL | ADI (Analog Devices, Inc.) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 3 V ~ 5.5 V, 4.5 V ~ 18 V | - | - | |
| UCC21225ANPLR | N/A | UCC21225ANPLR | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 3 V ~ 18 V | - | - | |
| 1EDC05I12AHXUMA1 | International Rectifier (Infineon Technologies) | IC IGBT GATE DRIVER UL 8DSOP | EiceDriver™ | -40°C ~ 150°C (TJ) | Tape & Reel (TR) | Surface Mount | - | - | 3.1 V ~ 17 V | - | - | |
| SI8230AD-D-IS3 | Energy Micro (Silicon Labs) | ISOLATED GATE DRIVER, 8 MM CREEP | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| SI82394BB4-IS1 | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 10 V ~ 24 V | - | - | |
| ADUM3223ARZ | ADI (Analog Devices, Inc.) | DGTL ISO 3KV 2CH GATE DVR 16SOIC | iCoupler® | -40°C ~ 125°C | Tube | Surface Mount | - | - | 4.5 V ~ 18 V | - | - | |
| SI8261BCD-C-IMR | Energy Micro (Silicon Labs) | DGTL ISO 5KV 1CH GATE DRVR 8LGA | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 13.5 V ~ 30 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.