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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FOD8384R2V | AMI Semiconductor / ON Semiconductor | OPTOISO 5KV 1CH GATE DRIVER 5SOP | - | -40°C ~ 100°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| 1EDI2015ASXUMA1 | International Rectifier (Infineon Technologies) | IC GATE DRIVER HVIC DSO36 | Automotive, AEC-Q100, EiceDriver™ | - | - | - | - | - | - | - | - | |
| HCPL-3180-060E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DVR 8DIP | - | -40°C ~ 100°C | Tube | Through Hole | - | - | 10 V ~ 20 V | - | - | |
| PS9402-V-E3-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV 1CH GATE DRVR 16SSOP | - | -40°C ~ 110°C | Strip | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| ISO5852SQDWQ1 | N/A | DGTL ISO 5.7KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI82390CB-IS1 | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 12.8 V ~ 24 V | - | - | |
| PS9506L3-V-E3-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV GATE DRIVER 8DIP GW | - | -40°C ~ 110°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| SI8261ABA-C-ISR | Energy Micro (Silicon Labs) | DGTL ISO 1CH GATE DRIVER | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | - | - | - | 9.4 V ~ 30 V | - | - | |
| SI8233BB-D-ISR | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 9.4 V ~ 24 V | - | - | |
| PS9905-Y-V-F3-AX | CEL (California Eastern Laboratories) | OPTOISO 7.5KV GATE DRIVER 8LSDIP | - | -40°C ~ 110°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.