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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI8751AB-IS | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRIVER 8SOIC | - | -40°C ~ 105°C | Tube | Surface Mount | - | - | 2.25 V ~ 5.5 V | - | - | |
| PS9505L3-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV GATE DRIVER 8DIP GW | - | -40°C ~ 110°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| PS9531-V-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV 1CH GATE DRIVER 8DIP | - | -40°C ~ 125°C | Tube | Through Hole | - | - | 15 V ~ 30 V | - | - | |
| SI8261ACC-C-IP | Energy Micro (Silicon Labs) | DGTL ISO 3.75KV GATE DRVR 8DIPGW | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 13.5 V ~ 30 V | - | - | |
| SI82395BB-IS1 | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 10 V ~ 24 V | - | - | |
| BM60210FV-CE2 | LAPIS Semiconductor | DGTL ISO 1CH GATE DRIVER 20SSOP | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 24 V | - | - | |
| TLP358(TP1,F) | Toshiba Semiconductor and Storage | OPTOISO 3.75KV 1CH GATE DVR 8SMD | - | -40°C ~ 100°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI8233BD-D-IS3R | Energy Micro (Silicon Labs) | ISOLATED GATE DRIVER, 8 MM CREEP | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| ACPL-K312-560E | Avago Technologies (Broadcom Limited) | OPTOISO 5KV 1CH GATE DRIVER 8SO | - | -40°C ~ 100°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| HCPL-3150#500 | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV GATE DRVR 8DIP GW | - | -40°C ~ 100°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.