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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ACPL-32JT-000E | Avago Technologies (Broadcom Limited) | OPTOISO 5KV 1CH GATE DRVR 16SOIC | Automotive, AEC-Q100, R²Coupler™ | -40°C ~ 125°C | Tube | Surface Mount | - | - | 18 V ~ 22 V | - | - | |
| SI8282CD-IS | Energy Micro (Silicon Labs) | DGTL ISO 5KV 1CH GATE DVR 20SOIC | - | -40°C ~ 125°C | Tube | Surface Mount | - | - | 12 V ~ 30 V | - | - | |
| PS9306L-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV GATE DRIVER 6SDIP GW | - | -40°C ~ 110°C | Bulk | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| ACNV3130-500E | Avago Technologies (Broadcom Limited) | OPTOISO 7.5KV GATE DRVR 10DIP GW | - | -40°C ~ 105°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| ADUM4223BRWZ-RL | ADI (Analog Devices, Inc.) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | iCoupler® | -40°C ~ 125°C | Original-Reel® | Surface Mount | - | - | 7.5 V ~ 18 V | - | - | |
| SID1112K | Power Integrations | DGTL ISO GATE DRVR | SCALE-iDriver™ | -40°C ~ 125°C | - | Surface Mount | - | - | 4.75 V ~ 5.25 V | - | - | |
| TLP352(TP1,F) | Toshiba Semiconductor and Storage | OPTOISO 3.75KV 1CH GATE DVR 8SMD | - | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| HCPL-3140-500E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV GATE DRVR 8DIP GW | - | -40°C ~ 100°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| PS9332L2-V-E3-AX | Renesas Electronics America | OPTOISO 5KV GATE DRIVER 8SDIP GW | - | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI8232AB-B-ISR | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 24 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.