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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI8233BD-C-ISR | Energy Micro (Silicon Labs) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 9.4 V ~ 24 V | - | - | |
| ACNT-H313-000E | Avago Technologies (Broadcom Limited) | OPTOISO 7.5KV 1CH GATE DRVR 8SO | - | -40°C ~ 105°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI82398BD4-ISR | Energy Micro (Silicon Labs) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 24 V | - | - | |
| SI82395BD-ISR | Energy Micro (Silicon Labs) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 24 V | - | - | |
| TLP5774(D4-TP,E | Toshiba Semiconductor and Storage | GATE DRIVE COUPLER; LOW INPUT CU | - | -40°C ~ 110°C | - | - | - | - | 10 V ~ 30 V | - | - | |
| SI8232BB-B-IS1 | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 9.4 V ~ 24 V | - | - | |
| PS9402-V-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV 1CH GATE DRVR 16SSOP | - | -40°C ~ 110°C | Strip | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI8274AB4D-IMR | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 14LGA | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 4.6 V ~ 30 V | - | - | |
| ISO5851DWR | N/A | DGTL ISO 5.7KV GATE DRVR 16SOIC | - | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI8230BD-B-ISR | Energy Micro (Silicon Labs) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 9.4 V ~ 24 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.