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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI8221CC-A-IS | Energy Micro (Silicon Labs) | DGTL ISO 3.75KV GATE DRVR 8SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 12.2 V ~ 24 V | - | - | |
| SI8235AB-C-IS1 | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| 5962-0420401HPC | Avago Technologies (Broadcom Limited) | OPTOISO 1.5KV 1CH GATE DRVR 8DIP | - | -55°C ~ 125°C | Tube | Through Hole | - | - | 15 V ~ 30 V | - | - | |
| SI8261ACD-C-IS | Energy Micro (Silicon Labs) | DGTL ISO 5KV 1CH GATE DRVR 6SDIP | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 13.5 V ~ 30 V | - | - | |
| HCPL-0302 | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DRVR 8SO | - | -40°C ~ 100°C | Tube | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| TLP5214A(D4-TP,E | Toshiba Semiconductor and Storage | OPTOCOUPLER IGBT 4A 110C OPR TEM | - | -40°C ~ 110°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| FOD3181SD | AMI Semiconductor / ON Semiconductor | OPTOISO 5KV 1CH GATE DRIVER 8SMD | - | -20°C ~ 85°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 20 V | - | - | |
| HCPL-5150-100 | Avago Technologies (Broadcom Limited) | OPTOISO 1.5KV 1CH GATE DRVR 8SMD | - | -55°C ~ 125°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| ADUM3224WCRZ-RL7 | ADI (Analog Devices, Inc.) | DGTL ISO 3KV 2CH GATE DVR 16SOIC | Automotive | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 3 V ~ 5.5 V, 4.5 V ~ 18 V | - | - | |
| TLP5751(D4,E | Toshiba Semiconductor and Storage | OPTOISO 5KV 1CH GATE DRIVER 6SO | - | -40°C ~ 110°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.