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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI8261ABD-C-IS | Energy Micro (Silicon Labs) | DGTL ISO 5KV 1CH GATE DRVR 6SDIP | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 9.4 V ~ 30 V | - | - | |
| SI8235AB-D-IS1 | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| TLP352F(D4,F) | Toshiba Semiconductor and Storage | OPTOISO 3.75KV 1CH GATE DVR 8DIP | - | -40°C ~ 125°C | Tube | Through Hole | - | - | 15 V ~ 30 V | - | - | |
| PS9307L-E3-AX | Renesas Electronics America | OPTOISO 5KV 1CH GATE DRVR 6SDIP | NEPOC | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| ACPL-P314-000E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DRVR 6SO | - | -40°C ~ 100°C | Tube | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| TLP352(F) | Toshiba Semiconductor and Storage | OPTOISO 3.75KV 1CH GATE DVR 8DIP | - | -40°C ~ 125°C | Tube | Through Hole | - | - | 15 V ~ 30 V | - | - | |
| SI8261ACD-C-IM | Energy Micro (Silicon Labs) | DGTL ISO 5KV 1CH GATE DRVR 8LGA | Automotive, AEC-Q100 | -40°C ~ 125°C | Tray | Surface Mount | - | - | 13.5 V ~ 30 V | - | - | |
| PC928J00000F | Sharp Microelectronics | OPTOISO 4KV 1CH GATE DRVR 14SMT | OPIC™ | -25°C ~ 80°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| ISO5852SDWR | N/A | DGTL ISO 5.7KV GATE DRVR 16SOIC | - | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| TLP151A(TPR,E) | Toshiba Semiconductor and Storage | OPTOISO 3.75KV GATE DRIVER 6SO-5 | - | -40°C ~ 110°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 30 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.