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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LTV-3150-L-M | Lite-On, Inc. | OPTOISO 5KV 1CH GATE DRIVER 8DIP | - | -40°C ~ 105°C | Tube | Through Hole | - | - | 10 V ~ 30 V | - | - | |
| ADUM6132ARWZ | ADI (Analog Devices, Inc.) | DGTL ISO 3.75KV GATE DRVR 16SOIC | IsoPower®, iCoupler® | -40°C ~ 85°C | Tube | Surface Mount | - | - | 12.5 V ~ 17 V | - | - | |
| SI8234AD-D-ISR | Energy Micro (Silicon Labs) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| ACPL-K312-000E | Avago Technologies (Broadcom Limited) | OPTOISO 5KV 1CH GATE DRIVER 8SO | - | -40°C ~ 100°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| SI8235AB-C-IS1R | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| SI8234BB-D-IM1 | Energy Micro (Silicon Labs) | ISOLATED GATE DRIVER | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| SI8282BC-ISR | Energy Micro (Silicon Labs) | DGTL ISO 3.75KV 1CH GATE DRVR | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 2.8 V ~ 5.5 V | - | - | |
| ACNW3430-300E | Avago Technologies (Broadcom Limited) | OPTOISO 5KV GATE DRIVER 8SMD GW | - | -40°C ~ 105°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| ADUM4121ARIZ | ADI (Analog Devices, Inc.) | DGTL ISO 5KV 1CH GATE DRVR 8SOIC | iCoupler® | -40°C ~ 125°C | Tube | Surface Mount | - | - | 4.5 V ~ 35 V | - | - | |
| SI8235BB-D-IS1R | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 9.4 V ~ 24 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.