Loading products…
| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ADUM5230WARWZ-RL | ADI (Analog Devices, Inc.) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive | -40°C ~ 105°C | Tape & Reel (TR) | Surface Mount | - | - | 12 V ~ 18.5 V | - | - | |
| SI8261BAC-C-IPR | Energy Micro (Silicon Labs) | DGTL ISO 3.75KV GATE DRVR 8DIPGW | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 30 V | - | - | |
| SI8273ABD-IM1R | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 14LGA | Automotive, AEC-Q100 | -40°C ~ 125°C | - | Surface Mount | - | - | 4.2 V ~ 30 V | - | - | |
| SI8230AD-B-ISR | Energy Micro (Silicon Labs) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| FDA217S | IXYS Integrated Circuits Division | OPTOISO 3.75KV 2CH GATE DVR 8SMD | - | -40°C ~ 85°C | Tube | Surface Mount | - | - | - | - | - | |
| SI8237AB-B-IS1R | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| SI8273DB-IS1R | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 9.6 V ~ 30 V | - | - | |
| PSDM-0DN1-5040 | Schurter | DGTL ISO 3.5KV GATE DRVR MODULE | - | -40°C ~ 85°C | Bulk | Through Hole | - | - | 10 V ~ 15 V | - | - | |
| ISO5852SMDWREP | N/A | DGTL ISO 5.7KV GATE DRVR 16SOIC | - | -55°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| HCPL-3020-560 | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV GATE DVR 8DIP GW | - | -40°C ~ 100°C | Tape & Reel (TR) | Surface Mount | - | - | 10 V ~ 30 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.